High Performance Circuits Design for 1.5V Dynamic Random Access Memory

碩士 === 國立中山大學 === 電機工程學系 === 87 === Four low power and high speed circuits for a 1.5V high performance DRAM are presented in this thesis. First, a modified low power and high speed flip-flop is proposed. A NMOS transistor is inserted into the master latch of the proposed flip-flop so as...

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Bibliographic Details
Main Authors: Cheng-Chih Hsu, 徐正池
Other Authors: Jyi-Tsong Lin
Format: Others
Language:en_US
Published: 1999
Online Access:http://ndltd.ncl.edu.tw/handle/32086053042268761651

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