| Summary: | 碩士 === 國立中山大學 === 物理學系 === 87 === It is found that the most HTSC systems can be continuously doped either by varying the oxygen concentration or by making suitable nonisovalent substitutions in the parent compound. The issue of the fundamental problem is the relationship between the hole-concentration and the transition temperature. The substitution of nonisovalent cations for the native cations in the cuprates is of great interest, because it is expected that by such substitution the charge distribution in the structure, and consequently, the concertration of charge carriers could be varied. In this thesis, we have made the single-phase sintered samples which are R1-xCaxBa2-xLaxCu3O7-δ.
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