Fabrications of Porous Silicon Light Emitting Diodes
碩士 === 國立中山大學 === 光電工程研究所 === 87 === In this work, porous silicon layers (PSLs) were fabricated by etching on single-crystalline p-Si substrates. An electrolyte mixture of HF/CH3OH and an etching current density 5mA/cm2 were applied at different time interval to form the PSLs. Scanning...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
1999
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Online Access: | http://ndltd.ncl.edu.tw/handle/61363723167640771589 |