A Simulation of Silicon Dioxide Effexts on the Growth rate of Silicon Selective Epitaxial Growth (SEG)
碩士 === 國立東華大學 === 電機工程研究所 === 87 === Low-temperature selective epitaxial growth (SEG) of silicon use dichlorosilane-hydrogen mixture in an LPCVD hot-wall reactor The growth rate of silicon SEG is dependent on the masking oxide thickness and percent of oxide coverage of the wafer. This thesis dev...
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| Format: | Others |
| Language: | en_US |
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1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/44535269644023353033 |