A Simulation of Silicon Dioxide Effexts on the Growth rate of Silicon Selective Epitaxial Growth (SEG)

• Main Author: 邱信諺
• Other Authors: 趙涵捷
• Format: Others
• Language: en_US
• Published: 1999
• Online Access: http://ndltd.ncl.edu.tw/handle/44535269644023353033

碩士 === 國立東華大學 === 電機工程研究所 === 87 === 　　Low-temperature selective epitaxial growth (SEG) of silicon use dichlorosilane-hydrogen mixture in an LPCVD hot-wall reactor The growth rate of silicon SEG is dependent on the masking oxide thickness and percent of oxide coverage of the wafer. This thesis develops mathematican representation for thegtrowth rate of silicon that includes the dependence on oxide thickness and percent of oxide coverage. The growth rate dependence on oxide thickness and percent of oxide coverage was shown by other researchers to be due to a change in the radiation hear transfer properties of the wafer causedy by the layer of oxide. The amount of radiation reflected by the silicon dioxide was averaged over a range of wavelemgths and shown to have a damped sinusodian dependence on the oxide. By making use of tansmission line theory to calculate reflectivity we find that it can provide a possible explanation for growth rate change. Because reflectvity only involves in thicness, so we add coverage factor to simulate. We can get resemble experiment result. We also try to add thim film to change physical property, and observe shat will happen and anlyze it. Besies, we compare the experiment and simulation result of 90% OC line in the same figure, them we try to find the one to one relationship My ideal is to divide the line to several segments. By using linear or quadratic approach method, we can search the relation of my segments The high degree approaches, the correct result will be . However, the process which dealing with high degree approach is more complicated. after simulating, we canget similar growth rate result through Equation relationship and predict it.