The fabrication and analysis of GaN light emitting diode
碩士 === 國立中央大學 === 光電科學研究所 === 87 === In this paper, we fabricate GaN LED by using ECR etching technology.And after ECR etching process, we use RTA (Rapid thermal annealing) to recover the lattice quality which is damaged in the ECR etching process and to improve device performance.We find...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1999
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/50094743205148948067 |
| Summary: | 碩士 === 國立中央大學 === 光電科學研究所 === 87 === In this paper, we fabricate GaN LED by using ECR etching technology.And after ECR etching process, we use RTA (Rapid thermal annealing) to recover the lattice quality which is damaged in the ECR etching process and to improve device performance.We find that by using RTA technique , reverse leakage current of LED device can be decreased. Besides RTA technique, we also try chemical solution treatment technique to do research on decreasing damage caused by ECR etching
|
|---|