Mg and Mg+P Ion Implanted GaN Thin Films

碩士 === 國立中央大學 === 物理研究所 === 87 === The structure changes and the optical and electrical characteristics of GaN thin films doped with Mg and P ions implantation were studied. The GaN was grown on c- plane sapphire substrate by metalorganic chemical vapor deposition ( MOCVD ). In this thesi...

Full description

Bibliographic Details
Main Authors: Pao-Ling Koh, 戈保凌
Other Authors: G. C. Chi
Format: Others
Language:en_US
Published: 1999
Online Access:http://ndltd.ncl.edu.tw/handle/53733899474249710814