A Study of X-ray Phase-Shifting Masks

• Main Authors: Kai-Shyang You, 游凱翔
• Other Authors: Yang-Tung Huang
• Format: Others
• Language: zh-TW
• Published: 1999
• Online Access: http://ndltd.ncl.edu.tw/handle/10006782192771809565

碩士 === 國立交通大學 === 電子工程系 === 87 === In this study, we investigated the fabrication of the x-ray phase shifting masks which used the silicon rich nitride as membranes and Al, Mo, and W compound as shifters. The simulation and basic theory are discussed in this article. The silicon rich nitride film was deposited by the LPCVD system with mixed gas sources of NH3 and SiH2Cl2 at different temperatures. The PECVD-SiO2 was deposited on the nitride film that improved the optical transmittance at the 633nm. The HENKE simulation tool was used to simulate the shifter layer transmittance, absorption rate, and reflectance at different x-ray energy. This tool also could simulate the Al, Mo, and W thickness of the p shifting. The comparison of the wet etching and lift off processes are also discussed.