The Width-Dependent Hot Carrier Reliability of Deep-Submicron CMOS with Shallow Trench Isolation
碩士 === 國立交通大學 === 電子工程系 === 87 === To improve the packing density of integrated circuits, scaling of CMOS isolation become indispensable. Recently, the shallow-trench-isolation (STI) technology has been widely used to achieve this goal. Moreover, STI can improve the subthreshold hump, bir...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/64955702322560017981 |