| Summary: | 碩士 === 國立交通大學 === 電子工程系 === 87 === In this thesis, we investigate the effects of rapid post-deposition annealing (PDA) on the characteristics of TEOS deposited polyoxides ~ 11.0nm, were systematically studied with respect to PDA temperature, time, and temperature ramp rate. The results indicate that the higher annealing temperature got the better electrical characteristics and a suitable choice of PDA time will be important to obtain high quality polyoxides. To improve oxide quality, long PDA time treatment should be avoided as possible.
Finally, we study the effects of several pre-oxidation treatment technologies, including pre-oxidation nitrogen RTA, oxidizing thin recrystallized-polysilicon film on poly-1, oxidizing thin amorphous film on poly-1 on polyoxides. The obtained polyoxide has the desirable electrical characteristics of lower leakage current and higher breakdown field than those of polyoxide as-grown. At the same time, the oxides grown on treated-polysilicon have lower electron trapping rates and larger charge-to-breakdown, both attributable to their smoother polyoxide/poly-1interface than those of polyoxides as-grown.
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