Hot Carrier Induced Drain Current Degradation in Thin-Oxide n- and p-MOSFET's
碩士 === 國立交通大學 === 電子工程系 === 87 === Hot carrier induced reliability issues have received considerable interest in deep-submicron CMOSFET's. As device dimension scales down, it's necessary to investigate the geometric dependencies of hot carrier effects, such as gate oxide thickne...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/18702227635735084149 |