Production of Semiconductor Devices on Plastics

碩士 === 國立交通大學 === 電子工程系 === 87 === In recent years, increasing requirement of modern household appliances promote the application range of small or large size Liquid Crystal Displays (LCDs) extensively. Low temperature (< 400oC) Al-gate poly-Si TFTs is the most promising candidate for...

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Main Authors: Shih Hung-Ming, 施鴻民
Other Authors: Prof. Ching-Fa Yeh
Format: Others
Language:en_US
Published: 1999
Online Access:http://ndltd.ncl.edu.tw/handle/72080941777318996682
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spelling ndltd-TW-087NCTU04280332016-07-11T04:13:35Z http://ndltd.ncl.edu.tw/handle/72080941777318996682 Production of Semiconductor Devices on Plastics 塑膠基板上半導體元件之試作 Shih Hung-Ming 施鴻民 碩士 國立交通大學 電子工程系 87 In recent years, increasing requirement of modern household appliances promote the application range of small or large size Liquid Crystal Displays (LCDs) extensively. Low temperature (< 400oC) Al-gate poly-Si TFTs is the most promising candidate for large-size and high pixel-density AMLCDs because of low resistivity. Besides, polymer-film LCDs (PFLCDs) are also adequate for the tendency of product improvement. Plastic substrates have the advantages of light-weighted, thin-shaped and not-so-easily-broken characteristics. But the technologies of producing semiconductor devices on plastics are not mature yet. In this research, several key technologies about fabricating semiconductor devices on plastics including selection of plastic substrates, setup of anodic oxidation system and metal thin film deposition on plastics are investigated. We selected the ARTON plastic film produced by JSR Corporation to carry out the following experiments after testing out the physical and chemical properties of various plastics. Further, the best candidate for active matrix addressing on plastics is Metal-Insulator-Metal (MIM) diodes with anodic Ta2O5 as insulator because of low temperature and good dielectric properties. In the beginning of the experiments, It's the biggest challenge that peeling effect upon Ta film deposited on plastics. Depositing a thin Ti film between Ta and oxide layer to improve adhesion. Hence, the MIM devices with anodic tantalum oxide on plastics are finally fabricated. Due to process induced stresses that have large influences on devices fabrication, special care should be taken to substrate handling practices and to process conditions in order to produce robust plastic displays at high yield. Eventually, we design a series of reliability tests for evaluation of device stability which include temperature tests, humidity test, exposure tests and shoch tests. Then we discuss the results measured form the experiments. Prof. Ching-Fa Yeh 葉清發 1999 學位論文 ; thesis 95 en_US
collection NDLTD
language en_US
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description 碩士 === 國立交通大學 === 電子工程系 === 87 === In recent years, increasing requirement of modern household appliances promote the application range of small or large size Liquid Crystal Displays (LCDs) extensively. Low temperature (< 400oC) Al-gate poly-Si TFTs is the most promising candidate for large-size and high pixel-density AMLCDs because of low resistivity. Besides, polymer-film LCDs (PFLCDs) are also adequate for the tendency of product improvement. Plastic substrates have the advantages of light-weighted, thin-shaped and not-so-easily-broken characteristics. But the technologies of producing semiconductor devices on plastics are not mature yet. In this research, several key technologies about fabricating semiconductor devices on plastics including selection of plastic substrates, setup of anodic oxidation system and metal thin film deposition on plastics are investigated. We selected the ARTON plastic film produced by JSR Corporation to carry out the following experiments after testing out the physical and chemical properties of various plastics. Further, the best candidate for active matrix addressing on plastics is Metal-Insulator-Metal (MIM) diodes with anodic Ta2O5 as insulator because of low temperature and good dielectric properties. In the beginning of the experiments, It's the biggest challenge that peeling effect upon Ta film deposited on plastics. Depositing a thin Ti film between Ta and oxide layer to improve adhesion. Hence, the MIM devices with anodic tantalum oxide on plastics are finally fabricated. Due to process induced stresses that have large influences on devices fabrication, special care should be taken to substrate handling practices and to process conditions in order to produce robust plastic displays at high yield. Eventually, we design a series of reliability tests for evaluation of device stability which include temperature tests, humidity test, exposure tests and shoch tests. Then we discuss the results measured form the experiments.
author2 Prof. Ching-Fa Yeh
author_facet Prof. Ching-Fa Yeh
Shih Hung-Ming
施鴻民
author Shih Hung-Ming
施鴻民
spellingShingle Shih Hung-Ming
施鴻民
Production of Semiconductor Devices on Plastics
author_sort Shih Hung-Ming
title Production of Semiconductor Devices on Plastics
title_short Production of Semiconductor Devices on Plastics
title_full Production of Semiconductor Devices on Plastics
title_fullStr Production of Semiconductor Devices on Plastics
title_full_unstemmed Production of Semiconductor Devices on Plastics
title_sort production of semiconductor devices on plastics
publishDate 1999
url http://ndltd.ncl.edu.tw/handle/72080941777318996682
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AT shīhóngmín sùjiāojībǎnshàngbàndǎotǐyuánjiànzhīshìzuò
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