| Summary: | 碩士 === 國立交通大學 === 物理研究所 === 87 === Under the procedure of P and Si growth on Si (100) by chemical vapor deposition from phosphine and disilane, the hydrogen of adsorbed on Si (100) impedes the growth. We investigated, using real-time variable-temperature scanning tunneling microscopy, the image of hydrogen desorption from Si (100)-2×1: H at several temperature. According to the annealing time and hydrogen desorption coverage by directly counting the site on image, then desorption rate of hydrogen from surface in 585-668K temperature range has known to obeys the first-order kinetics. The data of isothermal desorption at temperature 611, 622, 633, 644 and 668K give us the kinetic parameter activity energy Ed = 1.9 eV and pre-exponential factor νd= 2.0×1012 S-1. In addition, the disilane and phosphine grow to 1D line structure on Si (100) surface at 611K. Then we compare the difference of hydrogen desorption from Si (100) surface and 1D line structure, the 1D line structure dimers that hydrogen has desorbed repel each other.
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