The influence of electricfield in nanostructure
碩士 === 國立交通大學 === 物理研究所 === 87 === Recently,the research of nanostructure has attracted much researcher’s interest.The theoretical discussion of the formation of the nanostructure is not very clear and need further studies. AFM(Atomic Force Microscopy)and STM(Scanning Tunnellin...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1999
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/39427543647226171969 |
| Summary: | 碩士 === 國立交通大學 === 物理研究所 === 87 === Recently,the research of nanostructure has attracted much researcher’s interest.The theoretical discussion of the formation of the nanostructure is not very clear and need further studies.
AFM(Atomic Force Microscopy)and STM(Scanning Tunnelling Microscopy) are popular tools for fabrication of nanostructures.We use the theory of Cabrera and Mott to explain the formation of nanostructures.The electric field in the space between the conducting tip and the samples is calculated with a charge simulation method(CSM).
And our results shows that the growth of the oxide nanostructures can be very well understood with the Cabrera and Mott theory if the electric field is well characterized.
We could simulate the growth of nanostructure and analyed the simulated results by comparing with experiment results.
|
|---|