A Study of Reactive Ion-Beam Etch Process on the Via Formation

• Main Authors: Jyh-Uei Guo, 郭致威
• Other Authors: T. E. Hsieh
• Format: Others
• Language: zh-TW
• Published: 1999
• Online Access: http://ndltd.ncl.edu.tw/handle/44464124964682120890

碩士 === 國立交通大學 === 材料科學與工程系 === 87 === This experiment is to fabricate a multi-layer interconnect substrate containing x-y circuits. The main theme of this study is on the characteristics of RIE etching technique applied to polyimide (PI) in order to gain a better understanding on the effects of etching mechanism. Anisotropic etching using RIE can be obtained by adjusting the processing parameters. We fixed the gas flow and change the system pressure, ratio of CHF3 / O2 and plasma power to observe the effects on DC bias, horizontal and vertical etching rate, via profile, etching residues, loading effect during RIE process. We formed the via with desired shape was formed so that uniform coverage of the Al film can be achieved.