A Study of Surface Morphology in Thin Films Processing

碩士 === 國立成功大學 === 機械工程學系 === 87 === This article is to discuss the influence of the parameters in the sputtering proceeding upon the morphology and roughness of thin films. We choose aluminum as the material and utilize the orthogonal array experiments and define three levers of the four...

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Bibliographic Details
Main Authors: Ming-Chang Wu, 吳明璋
Other Authors: Cheng-I Weng
Format: Others
Language:zh-TW
Published: 1999
Online Access:http://ndltd.ncl.edu.tw/handle/43498238094439907006
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Summary:碩士 === 國立成功大學 === 機械工程學系 === 87 === This article is to discuss the influence of the parameters in the sputtering proceeding upon the morphology and roughness of thin films. We choose aluminum as the material and utilize the orthogonal array experiments and define three levers of the four parameters: the substrate temperature, the gas pressure, the proceeding power and the substrate position. Then we design nine experiments by the L9 orthogonal array to investigate the influence upon thin films morphology and roughness within the range of the three levers. After the sputtering experiments, we derive the thin films morphology and measure their roughness by the atomic force microscopy (AFM). Then we analyze the data to find out the relationship between the proceeding parameters and thin films morphology. The results show that the thin films morphology derived within the range of the parameters we choose is similar to that derived with the same material and proceeding but different measure instrument; furthermore, the roughness is in the same order of magnitude with that mentioned in the reference. These provide high validity in the sputtering experiments and the surface measurement of thin films. Concerning with the influence of proceeding parameters upon surface roughness of thin films, we find that the substrate temperature is the most important effect in the four parameters. The gas pressure and the proceeding power show less influence than the substrate temperature and the substrate position shows least influence upon the surface roughness of thin films. In addition, for the four parameters, only the substrate temperature always changes in the same orientation with the variation of roughness, the others possess the turning point. As compared with the reference which refers to change only one parameter every time, we find that there is some difference. This may be caused by the different settings of the other parameters and these parameters have some interactions with each other.