Deposition of Silicon Dioxide Films by Liquid Phase Deposition Method and Its Application on Semiconductor Devices

博士 === 國立成功大學 === 電機工程學系 === 87 === A low temperature process (30~50℃) for the formation of high-quality SiO2 films using liquid phase deposition (LPD) method on the various semiconductor substrates was proposed and investigated in this thesis. It was established that good and reliable properties of...

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Bibliographic Details
Main Authors: Na-Fu Wang, 王納富
Other Authors: Mau-Phon Houng
Format: Others
Language:en_US
Published: 1999
Online Access:http://ndltd.ncl.edu.tw/handle/18962983858200563491