The Study of Hg0.8Cd0.2Te Infrared Linear Arrays Photodetectors

• Main Authors: Fuh-Shyong Sheu, 許富雄
• Other Authors: Yan-Kuin Su
• Format: Others
• Language: en_US
• Published: 1999
• Online Access: http://ndltd.ncl.edu.tw/handle/19510567107225554665

碩士 === 國立成功大學 === 電機工程學系 === 87 === CdTe passivation layers grown by rf sputtering system for HgCdTe long wavelength infrared photodiodes have been developed in this study. We have investigated the structural characteristics and composite analysis of rf sputtered CdTe thin films grown on HgCdTe and sequentially annealed processes. The results of x-ray diffraction indicate that the as sputtered CdTe films are polycrystalline with mixture of cubic and hexagonal phases. The effects of rapid thermal treatments were to promote the transition of the hexagonal phase to cubic phase and also to induce the Hg-outdiffusion. Electrical properties of Au/ZnS/CdTe/HgCdTe heterostructure are presented by capacitance-voltage characterization. Also, preliminary current-voltage measurements of n-p photodiodes with the sputtered CdTe passivation were performed. In addition, 1 ’ 128 HgCdTe long wavelength infrared linear arrays photodetectors with anodic sulfide passivation have been fabricated. The yields of the detector arrays are 97.66% for 50mm’60mm pixel size, 72mm pitch size, and 77K operating temperature. The mean of dynamic resistance area product (R0A) is 8.16 Wocm2 at 77K and 0° FOV.