The Study of Doped Silicon Dioxide Deposited by Liquid-Phase Deposition Method

碩士 === 國立成功大學 === 電機工程學系 === 87 === In this paper, we use a room temperature processing system, Liquid Phase Deposition (LPD) method, as theoretic background to study the doping (N, P) silicon oxide;To investigate the the properties of silicon dioxide , we have done different physical and...

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Bibliographic Details
Main Authors: Don-Jan Tsay, 蔡東展
Other Authors: Mau-Phon Houng
Format: Others
Language:zh-TW
Published: 1999
Online Access:http://ndltd.ncl.edu.tw/handle/22928227577214162161