SiXGe1-X BASED δ- DOPED FIELD EFFECT TRANSISTORS
碩士 === 國立成功大學 === 電機工程學系 === 87 === Improving in manufacturing control will be necessary for future generation device technology. A main problem will be the control of deposition and doping at the atomic level. Recently, several growth techniques have been developed to growth d doping lay...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/89612345927369440328 |