SiXGe1-X BASED δ- DOPED FIELD EFFECT TRANSISTORS

• Main Authors: Tzung-Ting Han, 韓宗廷
• Other Authors: Shoou-Jinn Chang
• Format: Others
• Language: en_US
• Published: 1999
• Online Access: http://ndltd.ncl.edu.tw/handle/89612345927369440328

碩士 === 國立成功大學 === 電機工程學系 === 87 === Improving in manufacturing control will be necessary for future generation device technology. A main problem will be the control of deposition and doping at the atomic level. Recently, several growth techniques have been developed to growth d doping layer in silicon. However, no attempt has been made to our knowledge to use UHV/CVD in this respect. In this thesis, we attempt to grow d -doping layer by UHV/CVD, and to fabricate P-type δ-FET using the same structure. Characterizations of δ doping profile in Si by using secondary ion mass spectroscopy (SIMS) are presented. In this thesis, we also report a p-type SiGe inverted d doped heterostructure field effect transistor and a novel dipole d field effect transistor. At the same time, we also employ MEDICI simulator to investigate the behavior of these devices and to optimize the device structures.