Investigation of N type δ-doped High power heterostructure Field-Effect Transistors

Investigation of N type δ-doped High power heterostructure Field-Effect Transistors

碩士 === 國立成功大學 === 電機工程學系 === 87 === In this thesis, the investigation of single and double delta-doped channel InP-based HFET, with InAlAsSb Schottky layer, has been successfully fabricated by low-pressure metalorganic chemical vapor deposition ( LP-MOCVD ). Singleδ-doped ch...

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Bibliographic Details
Main Authors:	Yeh Chia-Yen, 葉佳彥
Other Authors:	Hsu Wei-Chou
Format:	Others
Language:	en_US
Published:	1999
Online Access:	http://ndltd.ncl.edu.tw/handle/32937463926666231947

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