Investigation of N type δ-doped High power heterostructure Field-Effect Transistors
碩士 === 國立成功大學 === 電機工程學系 === 87 === In this thesis, the investigation of single and double delta-doped channel InP-based HFET, with InAlAsSb Schottky layer, has been successfully fabricated by low-pressure metalorganic chemical vapor deposition ( LP-MOCVD ). Singleδ-doped ch...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/32937463926666231947 |