| Summary: | 碩士 === 國立成功大學 === 電機工程學系 === 87 === In this thesis, the investigation of single and double delta-doped channel InP-based HFET, with InAlAsSb Schottky layer, has been successfully fabricated by low-pressure metalorganic chemical vapor deposition ( LP-MOCVD ).
Singleδ-doped channel InP-based HFET exhibits excellent linearity in device performance. We can see that the gate-voltage-swing is more than 4 V and the average operating current range, for the transconductance around the peak value of 35 mS/mm (300 K ) or 45 mS/mm (77K), is about 200 mA/mm. It can improve the performance of microwave power device, such as the output power and the power-added efficiency. On the other hand, due to high energy bandgap (ΔEc > 0.7 eV) and high Schottky barrier height (>0.73eV)of the In0.34Al0.66As0.85Sb0.15 Schottky layer, high two-terminal gate-drain breakdown voltage of 40 V, three terminal off-state breakdown voltage over 40 V, and three terminal on-state breakdown voltage of 16 V at 300K, for double δ-doped channel HFET, is achieved . Both the two terminal and three terminal breakdown voltage show substantial improvement when compared to the previously reported InP-based device. This high breakdown voltage is suitable for high power application .
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