The Growth and Fabrication of AlInAsSb/InGaAs NDR Devices

The Growth and Fabrication of AlInAsSb/InGaAs NDR Devices

碩士 === 國立成功大學 === 電機工程學系 === 87 === In this thesis, we successfully grew high quality AlInAsSb bulk epitaxy layer and InGaAs bulk epitaxy layer lattice-matched on InP substrate with MOCVD. Besides, we grew 10 period AlInAsSb/InGaAs MQW sample for Double crystal X-ray diffractio...

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Bibliographic Details
Main Authors:	Wu Kuo-Ming, 吳國銘
Other Authors:	Su Y.K.
Format:	Others
Language:	en_US
Published:	1999
Online Access:	http://ndltd.ncl.edu.tw/handle/39783849992480595495

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