| Summary: | 碩士 === 國立成功大學 === 材料科學及工程學系 === 87 === Abstract
Effects of pulsed KrF laser annealing and vacuum annealing on the preferred orientation, microstructures, and electrical resistivity of Cu films deposited on TiN/Si and TiN/SiO2/Si by electron gun (E-gun) and sputtered gun were studied respectively. Upon puled KrF laser annealing the (111) preferred orientation of Cu films deposited by E-gun evaporation was enhanced, while that of Cu films deposited by sputtering was degraded. The possible reason may be attributed to the larger amounts of oxygen present in the Cu films deposited by sputtering. The TiN films grown on Si at higher temperatures such as 400℃ had (200) preferred orientation which somewhat degraded the (111) preferred growth of Cu film by pulsed KrF laser annealing. In the present study, for the Cu films 1000-3500Å thick annealed at an energy density of 0.3-0.8 J/cm2 the electrical resistivity in the range of 2.3-2.4 μΩ-cm and the (111) texture coefficient(TC) in the range of 1.64-1.74 could be obtained. In addition, the laser-annealed Cu films were very smooth without voids. Upon vacuum annealing the (111) preferred orientation of Cu films could not be improved, meanwhile significant amounts of voids were still present in them.
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