Stress Evolution of Ni/Pd/Si reaction system

• Main Authors: Ping-Lin Chung, 鍾秉霖
• Other Authors: Cho-Jen Tsai
• Format: Others
• Language: zh-TW
• Published: 1999
• Online Access: http://ndltd.ncl.edu.tw/handle/48946721609516113937

碩士 === 國立中興大學 === 材料工程學研究所 === 87 === Abstract NiSi is possibly an important material for VLSI process in the future, due to its low resistivity, lower silicon consumption, and no linewidth dependence of the sheet resistance. However, NiSi is a metastable phase instead of a stable phase (NiSi2). In order to be able to control the relative stability of different nickel silicides, we added an Pd interlayer to modify the kinetic paths of the formation sequence of nickel silicide and studied its influence on the formation temperature of nickel silicide. In this thesis, we employed in-situ curvature measurements (scanning laser method) to study the evolution of the F/W during isochronal annealing. We measured the curvature change of the samples annealing to 900℃with different ramping rates. By using Kissinger analysis, we evaluated the activation energies of the nickel silicides. With a Pd interlayer, the evolution of the F/W shows extra abrupt changes compared to that for Ni/Si system. Besides, we found that the Pd interlayer will retard the formation of nickel silicide. The retardation effect became more obvious with increasing Pd layer thickness. The threshold temperature for the formation of NiSi2 is not significantly altered. The activation energy determined by Kissinger analysis is around 0.8 for Ni2Si.