| Summary: | 碩士 === 義守大學 === 電子工程學系 === 87 === In the thesis, the finite element method is used to simulate the switch-on and switch-off dynamic characteristics and I-V behavior of amorphous silicon thin-film transistors. The switch-on time constant is determined by the time required to fill bulk trap states in the semiconductor channel, that is the time to move the initial Fermi level up to the steady Fermi level. The switch-off time constant is determined by the time required to empty the bulk trap state electrons that is the the time to shift the initial Fermi level down to the steady state Fermi level. Thus the term ■in the occupation dynamic equation determines the switch-on time constant, and the term ■ determines the switch-off time constant. The occupation function f is not Fermi distributionlike during switch-on and switch-off transient. Finally, compared with the measured data, these simulated results are reasonable.
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