| Summary: | 碩士 === 華梵大學 === 機電工程研究所 === 87 === There are two major parts in this resume .The first part includes measurement technique of light emitter devices. In general, the process and specification is disunity in LED and LD ,so it has some unstable characteristics and a lot of difficulty in quantize of light .In my master job is to setup a system and a flow chart for measure characteristics of light and electric device , it is also used photodiode for light emitter devices of sensor ,it is Si base and calibrate by GRASEBY OPTRONICS ,last analysis data for me understander emitter power and emitter intensity in all wavelength of light emitter device.
The second part is made P channel ,N channel MOSFET and N-well ,P+ of photodiode by UMC 0.5 um of DPDM process .In photodiode hand is unusual discussed for characteristics of light and temperature .It is found leakage current very large from the experiment and guantum efficiency is very low .So we support another kind structure of diode to consult and improve for process in mading photosensor future .Diode is also measured and analyzed on temperature from 10K to 325K .
It made more thirty kind size of PMOSFET and NMOSFET to extract parameter on temperature from 40oK to 300oK .They are measured the electrical characteristics from software of BSIM3 through GPIB and HP4145 ,HP4284 , including of simulate in current, voltage , mobility , capacity and other characteristics are discussed .We are also used semi-experience formula to find easy and accuracy low temperature semi-experience model.
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