| Summary: | 碩士 === 逢甲大學 === 電機工程學系 === 87 === Power semiconductor devices IGBT have undergone a remarkable development in recent years that is rapidly being incorporated into the power electronic applications. The purpose of this project is to develop the IGBT spice model, to design the optimum IGBT device and to verify experimentally the IGBT device and to make the IGBT model available to power electronic circuit designers.
The spice model is based upon the fabrication simulator SSUPREM IV, the device simulator ATLAS II, which simulate the static and dynamic characteristics, and the parameter extraction methodology, which extract the spice parameters. The IGBT device (CM20TF-12H) connected to external circuits is evaluated for the static characteristics. The IGBT device model is verified by comparing the experimental data with the simulation data of SPICE. The design of experiment (DOE) with the response surface method (RSM) is used to optimize the IGBT performance and to investigate the relationships with the device parameters. With the aid of DOE, the characteristic of IGBT device will be simulated and studied in detail.
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