The Synthesis of the Large Area Polycrystalline Diamond Films
碩士 === 國立雲林科技大學 === 電子與資訊工程技術研究所 === 86 === In this research, the large area polycrystalline diamond films were synthesized for the X-ray lithography membranes on the 4 inches of diameter silicon wafers by Microwave Plasma Chemical Vapor Deposition system. The silicon wafer was polished b...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1998
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| Online Access: | http://ndltd.ncl.edu.tw/handle/31711150821674669946 |
| Summary: | 碩士 === 國立雲林科技大學 === 電子與資訊工程技術研究所 === 86 === In this research, the large area polycrystalline diamond films were synthesized for the X-ray lithography membranes on the 4 inches of diameter silicon wafers by Microwave Plasma Chemical Vapor Deposition system. The silicon wafer was polished by 0-0.25 micron diamond powder to enhance the nucleation density. Typical deposition conditions were shown as follows: CH4/H2=1%-2%; pressure: 25 torr; temperature: 825oC. Deposition parameters were chosen to obtain reasonable good quality large area polycrystalline The diamond films stress was calculated by measuring the wafer radius of curvature. The diamond films have a stress of 110.7 to -38.7MPa. A SiNX film serving as a back etching mask was deposited by low-pressure CVD technique. The Si wafer was selectively etched from the back using KOH solution for the fabrication of diamond membranes. It was found that the optical transmittance of the diamond membrane at 630nm was up to 56.95% .
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