Diffusion of Magnesium into GaN And The Fabrication of PDP's RIB

• Main Authors: YEN, Jia-Liang, 顏嘉良
• Other Authors: Yang Ying-Jay
• Format: Others
• Language: zh-TW
• Published: 1998
• Online Access: http://ndltd.ncl.edu.tw/handle/89950771706288574562

碩士 === 國立臺灣大學 === 電機工程學系研究所 === 86 === In the rapid devolopment of semiconductor technology, GaN research has attract ed a lot attention in recent years. Because GaN has many advantageous features over the other blue materials, such as higher illumination, better irradiant efficiency, and longer lifetime.The method of forming p-type GaN. In addition to the in-situ doping method during the growth, ion implant and diffusion proc ess have been used to form p-type material in the post. Since ion implant tend s to generate a lot of lattice defect, and implanted Mg couldn't be activated in GaN. So we choose the method of high temperature (HT) diffusion process to obtain p-type GaN.As a result of our experiment, we prove that the method of H T diffusion can producing p-type GaN. In a 2 um thick n-type GaN grown on a su bstrate of c-face (0001) sapphire, carrier concentration is 2.67E+16, after 90 0C 4 hours diffusion, Hall measurement showed that it converted to p-type and carrier concentration is 1.07E+17. In another n-type GaN with 3.6 um thickness and carrier concentration of 2.23E+16, under the same diffusion condition, Ha ll measurement showed that GaN became p-type too, and carrierconcentration was 1.07E+17. The results indicates that HT diffusion of Mg into GaN is a fea sible method to form p-type GaN.Display monitor had indistinctively become ind ispensable in modern technology. But because of its large size and the limitat ion in showing area, the traditional Cathode Ray Tube display monitor graduall y couldn't satisfy the requirements of the fast moving development of modern l ife. The result is a continuous development of new display monitors.Through ca reful analysis of different kinds of display monitor, CRT display monitor is f ound to have the problem of too large a size; and the technique used for Field Emission Display Monitor is not fully developed; Liquid Crystal Display Monit ors and Light Emission Diode have the problems of view angle, full color, size , etc. So we could conclude that PDP should be the best choice in this batch o f new generation's Bigger size Display Monitors .However, when compared with C RT display monitors, the price of PDP seems to be too high. The reasons includ e the use of expensive materials, the high technology involved, and the main t hus most important reason being the complex and tiring process of fabrication in serigraphy for producing RIB. So, to forsake the usual method of serigraphy , and to develop the techniques of pressure, scraping, and rolling to reduce w orking time and worker requirement is the main topic of this treatise.Referrin g to the results proven in the experiments stated in this treatise, the method s involving pressure, scraping, and rolling to fabrication RIB are practicable indeed, and could be completed in 1step. Adopting these processes will visibl y result in less working time needed and reducing the number of workers requi red compared to the usual method of serigraphy. The target of this treatise is hereby achieved.