| Summary: | 碩士 === 國立臺灣大學 === 電機工程學系研究所 === 86 === In the rapid devolopment of semiconductor technology, GaN research has attract
ed a lot attention in recent years. Because GaN has many advantageous features
over the other blue materials, such as higher illumination, better irradiant
efficiency, and longer lifetime.The method of forming p-type GaN. In addition
to the in-situ doping method during the growth, ion implant and diffusion proc
ess have been used to form p-type material in the post. Since ion implant tend
s to generate a lot of lattice defect, and implanted Mg couldn't be activated
in GaN. So we choose the method of high temperature (HT) diffusion process to
obtain p-type GaN.As a result of our experiment, we prove that the method of H
T diffusion can producing p-type GaN. In a 2 um thick n-type GaN grown on a su
bstrate of c-face (0001) sapphire, carrier concentration is 2.67E+16, after 90
0C 4 hours diffusion, Hall measurement showed that it converted to p-type and
carrier concentration is 1.07E+17. In another n-type GaN with 3.6 um thickness
and carrier concentration of 2.23E+16, under the same diffusion condition, Ha
ll measurement showed that GaN became p-type too, and carrierconcentration was
1.07E+17. The results indicates that HT diffusion of Mg into GaN is a fea
sible method to form p-type GaN.Display monitor had indistinctively become ind
ispensable in modern technology. But because of its large size and the limitat
ion in showing area, the traditional Cathode Ray Tube display monitor graduall
y couldn't satisfy the requirements of the fast moving development of modern l
ife. The result is a continuous development of new display monitors.Through ca
reful analysis of different kinds of display monitor, CRT display monitor is f
ound to have the problem of too large a size; and the technique used for Field
Emission Display Monitor is not fully developed; Liquid Crystal Display Monit
ors and Light Emission Diode have the problems of view angle, full color, size
, etc. So we could conclude that PDP should be the best choice in this batch o
f new generation's Bigger size Display Monitors .However, when compared with C
RT display monitors, the price of PDP seems to be too high. The reasons includ
e the use of expensive materials, the high technology involved, and the main t
hus most important reason being the complex and tiring process of fabrication
in serigraphy for producing RIB. So, to forsake the usual method of serigraphy
, and to develop the techniques of pressure, scraping, and rolling to reduce w
orking time and worker requirement is the main topic of this treatise.Referrin
g to the results proven in the experiments stated in this treatise, the method
s involving pressure, scraping, and rolling to fabrication RIB are practicable
indeed, and could be completed in 1step. Adopting these processes will visibl
y result in less working time needed and reducing the number of workers requi
red compared to the usual method of serigraphy. The target of this treatise is
hereby achieved.
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