| Summary: | 碩士 === 國立臺灣大學 === 光電工程學研究所 === 86 === In this thesis, I discuss the use of an efficient finite-difference method in
solving the problems of Schroedinger equation in the conduction- and valence-
subbands of GaN-based quantum wells. In addition to solving the conventional
Rashba-Sheka-Pikus (RSP) six-band Hamiltonian in the valence band, I also cons
ider the effects of piezoelectricity due to the strained material growth, self
-consistent calculation on band structure due to the Poisson''s effect, many-bo
dy effect due to the long-range Coulomb interaction, and band-filling effects
in the momentum space due to the carrier injection. In doing so, one can effi
ciently derive numerical results as well as gain insight on the designing issu
es of light emitting structures and aspects of engineering the quantum well op
tical gain coefficients. One can further invokes the important spontaneous em
ission spectra of quantum well light emitting diodes and characterize the mate
rial parameters on the emission spectrum of blue nitride LEDs.
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