Research On The Amorphous Carbon Nitride Films Synthesized By ECR-CVD System
碩士 === 國立清華大學 === 材料科學工程研究所 === 86 === The purpose of this thesis is to study the amorphous carbon nitride films synthesized on Si substrate by using ECR - CVD system with various microwave powers, negative dc - bias and flow rate ratio of N2 - / C2H2. Plasma chemistry was investigated by OES sys...
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| Format: | Others |
| Language: | en_US |
| Published: |
1998
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| Online Access: | http://ndltd.ncl.edu.tw/handle/14518673752004886745 |
| Summary: | 碩士 === 國立清華大學 === 材料科學工程研究所 === 86 ===
The purpose of this thesis is to study the amorphous carbon nitride films synthesized on Si substrate by using ECR - CVD system with various microwave powers, negative dc - bias and flow rate ratio of N2 - / C2H2. Plasma chemistry was investigated by OES system during the deposition process. The highest film growth rate that can reach is as high as 353 nm / min. Raman scattering spectra show that all the amorphous carbon nitride films have a graphite strulture. The strong absorption band in the range 1000 - 1700 cm-1 of the FTIR spectrum is the direct evidence of the nitrogen that incorporated into carbon network. XPS analysis shows N / C = 0.38 of amorphous carbon nitride film and there are two different phases of the carbon nitride compound in the film. The N & K analyzer was used to characterize the refractive index and extinction coefficient of the amorphous carbon nitride films. The optical band gap (maximum ~ 2.24 eV) was derived by Tauc's equation, and was related to the microwave powers, negative dc - bias, and flow rate ratio of N2 / C2H2.
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