Development of Electrothermal Atomic Absorption Spectrometry and Neutron Activation Analysis for the Determination of Trace Elements in InSb Semiconductor and High-Purity Ag Metal

• Main Authors: Shiue, Meei-Yun, 薛美雲
• Other Authors: Sue-Lein Wang
• Format: Others
• Language: zh-TW
• Published: 1998
• Online Access: http://ndltd.ncl.edu.tw/handle/54035986078977006854

博士 === 國立清華大學 === 化學系 === 86 === The present study is aimed at development of electrothermalatomic absorption spectrometry (ETAAS) and neutron activationanalysis (NAA) for the determination of trace elements inhigh-purity materials including indium antimonide semiconductorand silver metal. There consists of four main parts in this work.Firstly, the effect of chemical modifiers including palladium andpalladium/magnesium on the determination of Te by electrothermal atomic absorption spectrometry was investigated. The possible mechanisms of tellurium with these modifiers were investigated with the assist of laser inductively coupled plasma mass (LS-ICPMS), electrothermal vaporization inductively coupled plasma mass (ETV-ICPMS) and scanning electron microscopy (SEM). Secondly, a method of slurry preparation and direct injection into the electrothermal atomizer for the determination of tellurium in indium antimonide was developed. The quality of analyte peak shape, precision, accuracy and limit of detection achievable by the proposed method were evaluated and discussed. Thirdly, methods for the determination of dopant concentration of Te in InSb semiconductor material by electrothermal atomic absorption spectrometry and radiochemical neutron activation analysis were developed. And finally, a neutron activation analysis technique for the determination of Au, Co, Cu, Fe, Hg and Zn in high purity silver materials, based on prior isolation of analytes from the silver matrix with two steps selective precipitation separation, was proposed. The practical applicability of the methods to real sample analysis was evaluated and discussed.