| Summary: | 博士 === 國立清華大學 === 化學系 === 86 === The present study is aimed at development of
electrothermalatomic absorption spectrometry (ETAAS) and neutron
activationanalysis (NAA) for the determination of trace elements
inhigh-purity materials including indium antimonide
semiconductorand silver metal. There consists of four main parts
in this work.Firstly, the effect of chemical modifiers including
palladium andpalladium/magnesium on the determination of Te by
electrothermal atomic absorption spectrometry was investigated.
The possible mechanisms of tellurium with these modifiers were
investigated with the assist of laser inductively coupled plasma
mass (LS-ICPMS), electrothermal vaporization inductively coupled
plasma mass (ETV-ICPMS) and scanning electron microscopy (SEM).
Secondly, a method of slurry preparation and direct injection
into the electrothermal atomizer for the determination of
tellurium in indium antimonide was developed. The quality of
analyte peak shape, precision, accuracy and limit of detection
achievable by the proposed method were evaluated and discussed.
Thirdly, methods for the determination of dopant concentration
of Te in InSb semiconductor material by electrothermal atomic
absorption spectrometry and radiochemical neutron activation
analysis were developed. And finally, a neutron activation
analysis technique for the determination of Au, Co, Cu, Fe, Hg
and Zn in high purity silver materials, based on prior isolation
of analytes from the silver matrix with two steps selective
precipitation separation, was proposed. The practical
applicability of the methods to real sample analysis was
evaluated and discussed.
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