| Summary: | 碩士 === 國立中山大學 === 物理學系 === 86 ===
In this work, we set up an inductively-coupled-plasma-enhance-chemical-vapor-deposition system and grow SiC thin film on Si(1OO) and Si(l13) at low temperature and high frequency. The source gases were SiH4, CH4, and the gas mixed with Ar95% and H25%. The influence of the growth of thin films from different source gases flow ratio, different plasma RF power, different plasma RF frequency and different substrate temperature have been studied. By FTIR spectroscopy investigation, the carbon content on the thin films increases for more CH4 flow, higher frequency of Rf plasma and higher power of RF plasma during the deposition. For higher substrate temperature, the hydrogen content on the thin film decreases but the oxygen content on the thin film increases. The C/Si atom ratio on the thin films has been analyzed by EPMA. All samples were etched by the solution mixed with HF48%:HN0365%=10:3 As C/Si atom ratio of the thin films is above 0.267, Despite of that Si substrate is etched, the SiC film is acid resistive and can remain a smooth and reflective surface. XRD analyses show these thin films containing both of the SiC and Si amorphous structures. TEM analyses reveal that on the thin film the crystalline structures exist, when the C/Si atom ratio was above 0.515.
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