Investigation of GaN Using Photoluminescence
碩士 === 國立中山大學 === 物理學系 === 86 === We discuss the PL spectra of GaN in two parts. The first is to explore the temperature dependence of GaN. By changing the temperature from 4.2K to room temperature, the variation of band gap is expressed as a function of temperature. Besides, the longitudina...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1998
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| Online Access: | http://ndltd.ncl.edu.tw/handle/38280682416981526695 |
| Summary: | 碩士 === 國立中山大學 === 物理學系 === 86 ===
We discuss the PL spectra of GaN in two parts. The first is to explore the temperature dependence of GaN. By changing the temperature from 4.2K to room temperature, the variation of band gap is expressed as a function of temperature. Besides, the longitudinal optical phonon energy of 90 meV is observed from the distribution of phonon replica peaks at low temperature and the temperature dependence of FWHM. Second, the excitation density dependence of GaN is performed to analysis the yellow luminescence of GaN. Compared with the slope of yellow luminescence in theoretical, we find that the origin of yellow luminescence is due to the transition of conduction band and shallow donor state to deep state.
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