Chemical Vapor Deposition of Tungsten Carbonitride Thin Films

碩士 === 國立交通大學 === 應用化學研究所 === 86 ===   The new complexes W(NtBu)2(NEt)2 and W(NtBu)2(NEtMe)2 were successfully synthesized by reacting W(NtBu)2(NHtBu)2 with excess NHEt2 and NHEtMe.   They were used as single-source precursors to deposit thin films by low pressure chemical vapor deposition (LPCVD)....

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Bibliographic Details
Main Authors: Chen, Shiou-Fan, 陳秀帆
Other Authors: Chiu, Hsin-Tien
Format: Others
Language:zh-TW
Published: 1998
Online Access:http://ndltd.ncl.edu.tw/handle/77576579071004584666

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