Chemical Vapor Deposition of Tungsten Carbonitride Thin Films

• Main Authors: Chen, Shiou-Fan, 陳秀帆
• Other Authors: Chiu, Hsin-Tien
• Format: Others
• Language: zh-TW
• Published: 1998
• Online Access: http://ndltd.ncl.edu.tw/handle/77576579071004584666

碩士 === 國立交通大學 === 應用化學研究所 === 86 === 　　The new complexes W(NtBu)2(NEt)2 and W(NtBu)2(NEtMe)2 were successfully synthesized by reacting W(NtBu)2(NHtBu)2 with excess NHEt2 and NHEtMe. 　　They were used as single-source precursors to deposit thin films by low pressure chemical vapor deposition (LPCVD). Deposition of thin films on silicon was carried out at temperatures 723-823K in a cold-wall reator while the precursors were vaporized at 323K. 　　The thin films were studied by WDS, ESCA, AES, XRD and SEM. Volatile products were identified by nuclear magnetic resonance (NMR), gas chromatography-mass (GC-MS) and residual gas analysis (RGA). Rrom these observations, decomposition of the tBuN- and Et2N- groups by β-hydrogen elimination and γ-methy1 elimination pathways are proposed.