Photoionization of Donor Impurity In a Finite Parabolic Quantum Well

碩士 === 國立交通大學 === 電子物理系 === 86 ===   In this thesis, we discussed the size of the photoinonization cross section of donor impurity in a finite parabolic quantum well. First, the groundstate energies and wave functions of finite parabolic quantum wells of GaAs surrounded by A1xGa1x As are calculated...

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Bibliographic Details
Main Authors: Lo, K. L., 羅崑崙
Other Authors: Yang, T. J.
Format: Others
Language:zh-TW
Published: 1998
Online Access:http://ndltd.ncl.edu.tw/handle/55333722049186337801
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Summary:碩士 === 國立交通大學 === 電子物理系 === 86 ===   In this thesis, we discussed the size of the photoinonization cross section of donor impurity in a finite parabolic quantum well. First, the groundstate energies and wave functions of finite parabolic quantum wells of GaAs surrounded by A1xGa1x As are calculated. Next, the binding energies of ground-state are evaluated for donor impurity in the wells with a variation method, using the wave functions that are the product of the hydrogenic wave functions and the wave functions of finite parabolic quantum wells. Finally, the photon energy dependence of the photoionization cross sections is calculated by using the formula of photoionization cross section of bulk case.   The result we obtained shows the binding energies and the photoionization cross-sections are affected by the width and the depth of the quantum wells.