Effects of Stain Relaxtion on Carrier Confinement and Depletion in InGaAs/GaAs Quantum Well
碩士 === 國立交通大學 === 電子物理系 === 86 === The transition of carrier distribution from the strained to the relaxed state in Ino0.2Ga0.8As/GaAs quantum well is studied by capacitance-voltage measurement. There are two-dimensional carrier confinement in the In0.2Ga0.8As quantum well with well thickness...
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| Format: | Others |
| Language: | zh-TW |
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1998
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| Online Access: | http://ndltd.ncl.edu.tw/handle/20342095447987113447 |