Effects of Stain Relaxtion on Carrier Confinement and Depletion in InGaAs/GaAs Quantum Well
碩士 === 國立交通大學 === 電子物理系 === 86 === The transition of carrier distribution from the strained to the relaxed state in Ino0.2Ga0.8As/GaAs quantum well is studied by capacitance-voltage measurement. There are two-dimensional carrier confinement in the In0.2Ga0.8As quantum well with well thickness...
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| Format: | Others |
| Language: | zh-TW |
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1998
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| Online Access: | http://ndltd.ncl.edu.tw/handle/20342095447987113447 |
| Summary: | 碩士 === 國立交通大學 === 電子物理系 === 86 ===
The transition of carrier distribution from the strained to the relaxed state in Ino0.2Ga0.8As/GaAs quantum well is studied by capacitance-voltage measurement. There are two-dimensional carrier confinement in the In0.2Ga0.8As quantum well with well thickness less than the critical thickness. When well thickness increases beyond the critical thickness, a significant carrier depletion around the quantum well is observed. Double crystal X-ray rocking curves show that when InGaAs well thickness increases beyond the critical thickness, interference pattern disappears and relaxation begins to occur from near the bottom InGaAs/GaAs interface while the top interface while the top interface still remains strained. The result of the critical thickness determined from X-ray diffraction corresponds to the transition of carrier distribution, illustrating that the capacitance-voltage technique is a very sensitive technique for determination of the critical thickness.
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