Si and GaAs PIN Photodiode Fabrication and Characterrization

• Main Authors: Hsiang, Wei-Wei, 項維巍
• Other Authors: Tai, Huo-Chou
• Format: Others
• Language: en_US
• Published: 1998
• Online Access: http://ndltd.ncl.edu.tw/handle/23659633520810128471

碩士 === 國立交通大學 === 光電工程研究所 === 86 === 　　In this thesis, we present the fabrication of 0.85um Si and GaAs PIN photodiode. Planar Si PIN photodiode is fabricated by POCL3 diffusion on P-P+ epitaxial wafer. The mesa structure is used in the GaAs PIN photodiode with AlGaAs/GaAs heterojunction. Characteristics of the device including dark current, quantum efficiency, and frequency response are measured and discussed. For the Si PIN photodiode of φ=200 um with AR coating operated at 5V reverse bias and room temperature, the dark current is 623pA. At 0.85um, the photoresopnsivity is 0.542A/W and the corresponding quantum efficiency is 0.79. The 3dB cut-off frequency is 100MHz.For GaAs PIN photodiode of φMesa=130 um with AR coating operated at 5V reverse bias and room temperature, the dark current is 237pA. At 0.85um, the 　photoresopnsivity is 0.494 A/W and the corresponding quantum efficiency is 0.72. The 3dB cut -coff frequency is above 400MHz.