| Summary: | 碩士 === 國立交通大學 === 電信工程研究所 === 86 === In this thesis, a so-called TRL (Through, Line, Reflection)
de-embedding method is developed. The method of de-embedding
includes 3 basic structure S-parameter measurements, namely,
through, line and reflection, and one device S-parameter
measurement. A FORTRAN program based on TRL de-embedding theory
is developed. An NEC71000 MESFET is tested to verify the
validity of the program. The de-embedded data are very close to
the data from NEC data sheet. The program can also provide
reflection coefficient data of any kind of line discontinuities
such as open-end and short-end. We utilize this method to make a
CPW open-end and short-end measurements, and uses HP series to
model the equivalent circuits.
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