THE ANALYSIS AND DESIGN OF BJT-BASED SILICON RETINAS AND THEIR APPLICATIONS ON IMAGE EDGE EXTRACTION AND MOVING OBJECT DETECTION

博士 === 國立交通大學 === 電子工程學系 === 86 === In this thesis the BJT-based silicon retinas and their applications onimage edge extraction and moving object detection are designed and analyzed.The main parts of this thesis include: (1) the characterization and analy...

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Main Authors: JIANG, HSIN-CHIN, 姜信欽
Other Authors: Wu Chung-Yu
Format: Others
Language:zh-TW
Published: 1998
Online Access:http://ndltd.ncl.edu.tw/handle/88950389823655821894
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spelling ndltd-TW-086NCTU04280202015-10-13T11:06:15Z http://ndltd.ncl.edu.tw/handle/88950389823655821894 THE ANALYSIS AND DESIGN OF BJT-BASED SILICON RETINAS AND THEIR APPLICATIONS ON IMAGE EDGE EXTRACTION AND MOVING OBJECT DETECTION 以雙載子接面電晶體為基礎之矽仿視網膜分析與設計及其在影像邊緣萃取和運動物體偵測的應用 JIANG, HSIN-CHIN 姜信欽 博士 國立交通大學 電子工程學系 86 In this thesis the BJT-based silicon retinas and their applications onimage edge extraction and moving object detection are designed and analyzed.The main parts of this thesis include: (1) the characterization and analysis ofimage smoothing functions in the BJT-based silicon retina; (2) theimplementation of the new BJT-based silicon retina using tunable imagesmoothing capability; (3) the implementation of the new image edge extractor using BJT-based silicon retina and thresholding detector; (4) the design of thenew motion sensor with BJT-based silicon retina and temporal zero-crossing detector.Firstly, the analytical models of the smoothing function of the BJT-based silicon retina under both single-point and multiple-point stimuli havebeen developed by considering the base resistance bias effect of the common-base BJT array. Through the analytical models, the operatingprinciple of the image smoothing performed by the BJT smoothing network of the BJT-based silicon retina can be well understood. Moreover, theparameters which affect the image smoothing characteristics of the BJT- basedsilicon retina can be characterized by the developed models and suitabledesign guidelines can be obtained. It may be seen from the derived equations that the smoothing characteristics depend upon the image contrast andbackground, which makes the BJT-based silicon retina adaptive in imagesmoothing. Experimental chip has been designed and fabricated by 0.6 um CMOS technology. Both measurement results and SPICE simulation results have substantiated the developed analytical model and verified the performance advantages of the BJT-based silicon retina. Thus the model can be used to efficiently simulate large-size BJT-based silicon retina which cannot be simulated in SPICE.Secondly, an improved BJT-based silicon retina with simple and compact structure is proposed and analyzed. In the proposed structure, the BJT smoothing network which models the layer of horizontal cells in the vertebrate retina is implemented by placing enhancement n-channel MOSFETs among the bases of parasitic BJTs existing in CMOS process toform an unique and compact structure. The nMOSFET can be operated in subthreshold region or strong-inversion region to provide a wide-range tunable channel resistance controlled by the common gate bias. Thus the smoothing characteristics can be tuned in a wide range. Moreover, an extra emitter isincorporated with each BJT at the pixel to act as the row switch. This reducesthe cell area of the silicon retina and increases the resolution. Using the proposed new structure, an experimental 64*64 BJT-based silicon retina chip has been fabricated by using 0.5um CMOS technology. The measurement results on the tunability of the smooth area in the smoothing network as well asthe dynamic characteristics of the proposed silicon retina in detecting moving objects have been presented. It is believed that theimproved structure is verysuitable for the VLSI implementation of the retina and its application systemsCMOS smart sensors.Thirdly, a compact and real-time 2-D edge sensor integrated with the embedded DRAM is proposed and analyzed. In the proposed edge sensor, the computation algorithm is based upon the algorithm inspired by the biologicalmodel of detecting spatial edges by thresholding the outputs of the siliconretina. Each basic detection cell in the sensor has a compact architecture which consists of one BJT- based silicon retina cell, one thresholding edge detector, and a DRAM storage cell. The significant features of the edge sensor are that the image acquisition and edge image generation can be performed in a parallel manner, and the DRAM storage cell can be incorporated into eachcell without additional interface circuits to store the resultant edge image forfurther processing by following processing system, such as neural network.Using the proposed architecture, an experimental 128*128 edge sensor chipwith a cell size of 30*30 um2 has been designed by using 0.25 um DRAM technology. The correct operations of the designed sensor chip have been verified through simulations. The complete sensor consumes about 150 mW at 3.3V.Finally, a 2-D velocity- and direction-selective visual motion sensorwith BJT- based silicon retina and temporal zero-crossing detector is proposed and implemented. In the proposed sensor, the modified token-based delay-and-correlate computational algorithm is adopted to detect the specified speed and direction of moving object images. Moreover, binary pulsed signals areused as correlative signals to increase the velocity and direction selectivities. Each basic detection cell in the sensor has a compact architecture which consists of one BJT-based silicon retina cell, one current-input edge extractor, two delay paths, and four correlators.Using the proposed architecture, an experimental 32*32 visual motion sensor chip with a cell size of 100*100 mm2 has been designed and fabricatedby using 0.6 mm CMOS technology. The correct operations of the fabricatedsensor chip have been verified through measurements. The measured rangesof selectively detected on-chip velocity and direction in the fabricated sensor chip are 56mm/sec~5m/sec (1120pixel/sec~105 pixel/sec) and 0 degree ~360 degree, respectively. The complete sensor consumes 20mW at 5V.From the above results, it is believed that the proposed BJT-basedsilicon retina and its application architectures on edge extraction and motiondetection have a great potential in system-on-a-chip design of machine visionsystems which mimic human vision to achieve various efficient imageprocessing. Further researches in this field will be conducted in the future. Wu Chung-Yu 吳重雨 1998 學位論文 ; thesis 164 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
author2 Wu Chung-Yu
author_facet Wu Chung-Yu
JIANG, HSIN-CHIN
姜信欽
author JIANG, HSIN-CHIN
姜信欽
spellingShingle JIANG, HSIN-CHIN
姜信欽
THE ANALYSIS AND DESIGN OF BJT-BASED SILICON RETINAS AND THEIR APPLICATIONS ON IMAGE EDGE EXTRACTION AND MOVING OBJECT DETECTION
author_sort JIANG, HSIN-CHIN
title THE ANALYSIS AND DESIGN OF BJT-BASED SILICON RETINAS AND THEIR APPLICATIONS ON IMAGE EDGE EXTRACTION AND MOVING OBJECT DETECTION
title_short THE ANALYSIS AND DESIGN OF BJT-BASED SILICON RETINAS AND THEIR APPLICATIONS ON IMAGE EDGE EXTRACTION AND MOVING OBJECT DETECTION
title_full THE ANALYSIS AND DESIGN OF BJT-BASED SILICON RETINAS AND THEIR APPLICATIONS ON IMAGE EDGE EXTRACTION AND MOVING OBJECT DETECTION
title_fullStr THE ANALYSIS AND DESIGN OF BJT-BASED SILICON RETINAS AND THEIR APPLICATIONS ON IMAGE EDGE EXTRACTION AND MOVING OBJECT DETECTION
title_full_unstemmed THE ANALYSIS AND DESIGN OF BJT-BASED SILICON RETINAS AND THEIR APPLICATIONS ON IMAGE EDGE EXTRACTION AND MOVING OBJECT DETECTION
title_sort analysis and design of bjt-based silicon retinas and their applications on image edge extraction and moving object detection
publishDate 1998
url http://ndltd.ncl.edu.tw/handle/88950389823655821894
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description 博士 === 國立交通大學 === 電子工程學系 === 86 === In this thesis the BJT-based silicon retinas and their applications onimage edge extraction and moving object detection are designed and analyzed.The main parts of this thesis include: (1) the characterization and analysis ofimage smoothing functions in the BJT-based silicon retina; (2) theimplementation of the new BJT-based silicon retina using tunable imagesmoothing capability; (3) the implementation of the new image edge extractor using BJT-based silicon retina and thresholding detector; (4) the design of thenew motion sensor with BJT-based silicon retina and temporal zero-crossing detector.Firstly, the analytical models of the smoothing function of the BJT-based silicon retina under both single-point and multiple-point stimuli havebeen developed by considering the base resistance bias effect of the common-base BJT array. Through the analytical models, the operatingprinciple of the image smoothing performed by the BJT smoothing network of the BJT-based silicon retina can be well understood. Moreover, theparameters which affect the image smoothing characteristics of the BJT- basedsilicon retina can be characterized by the developed models and suitabledesign guidelines can be obtained. It may be seen from the derived equations that the smoothing characteristics depend upon the image contrast andbackground, which makes the BJT-based silicon retina adaptive in imagesmoothing. Experimental chip has been designed and fabricated by 0.6 um CMOS technology. Both measurement results and SPICE simulation results have substantiated the developed analytical model and verified the performance advantages of the BJT-based silicon retina. Thus the model can be used to efficiently simulate large-size BJT-based silicon retina which cannot be simulated in SPICE.Secondly, an improved BJT-based silicon retina with simple and compact structure is proposed and analyzed. In the proposed structure, the BJT smoothing network which models the layer of horizontal cells in the vertebrate retina is implemented by placing enhancement n-channel MOSFETs among the bases of parasitic BJTs existing in CMOS process toform an unique and compact structure. The nMOSFET can be operated in subthreshold region or strong-inversion region to provide a wide-range tunable channel resistance controlled by the common gate bias. Thus the smoothing characteristics can be tuned in a wide range. Moreover, an extra emitter isincorporated with each BJT at the pixel to act as the row switch. This reducesthe cell area of the silicon retina and increases the resolution. Using the proposed new structure, an experimental 64*64 BJT-based silicon retina chip has been fabricated by using 0.5um CMOS technology. The measurement results on the tunability of the smooth area in the smoothing network as well asthe dynamic characteristics of the proposed silicon retina in detecting moving objects have been presented. It is believed that theimproved structure is verysuitable for the VLSI implementation of the retina and its application systemsCMOS smart sensors.Thirdly, a compact and real-time 2-D edge sensor integrated with the embedded DRAM is proposed and analyzed. In the proposed edge sensor, the computation algorithm is based upon the algorithm inspired by the biologicalmodel of detecting spatial edges by thresholding the outputs of the siliconretina. Each basic detection cell in the sensor has a compact architecture which consists of one BJT- based silicon retina cell, one thresholding edge detector, and a DRAM storage cell. The significant features of the edge sensor are that the image acquisition and edge image generation can be performed in a parallel manner, and the DRAM storage cell can be incorporated into eachcell without additional interface circuits to store the resultant edge image forfurther processing by following processing system, such as neural network.Using the proposed architecture, an experimental 128*128 edge sensor chipwith a cell size of 30*30 um2 has been designed by using 0.25 um DRAM technology. The correct operations of the designed sensor chip have been verified through simulations. The complete sensor consumes about 150 mW at 3.3V.Finally, a 2-D velocity- and direction-selective visual motion sensorwith BJT- based silicon retina and temporal zero-crossing detector is proposed and implemented. In the proposed sensor, the modified token-based delay-and-correlate computational algorithm is adopted to detect the specified speed and direction of moving object images. Moreover, binary pulsed signals areused as correlative signals to increase the velocity and direction selectivities. Each basic detection cell in the sensor has a compact architecture which consists of one BJT-based silicon retina cell, one current-input edge extractor, two delay paths, and four correlators.Using the proposed architecture, an experimental 32*32 visual motion sensor chip with a cell size of 100*100 mm2 has been designed and fabricatedby using 0.6 mm CMOS technology. The correct operations of the fabricatedsensor chip have been verified through measurements. The measured rangesof selectively detected on-chip velocity and direction in the fabricated sensor chip are 56mm/sec~5m/sec (1120pixel/sec~105 pixel/sec) and 0 degree ~360 degree, respectively. The complete sensor consumes 20mW at 5V.From the above results, it is believed that the proposed BJT-basedsilicon retina and its application architectures on edge extraction and motiondetection have a great potential in system-on-a-chip design of machine visionsystems which mimic human vision to achieve various efficient imageprocessing. Further researches in this field will be conducted in the future.