Investigation of InGaP/GaAs Delta-Doped Heterojunction Bipolar Transistor (D2HBT)

Investigation of InGaP/GaAs Delta-Doped Heterojunction Bipolar Transistor (D2HBT)

碩士 === 國立成功大學 === 電機工程學系 === 86 === An InGaP/GaAs single heterojunction bipolar transistor (SHBT) with an 50A setback layer and a d-doped sheet inserting between base-emitterheterointerface was fabricated successfully and stuided. From the...

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Bibliographic Details
Main Authors:	Chen, Jing-Yuh, 陳敬育
Other Authors:	Wen-Chau Liu
Format:	Others
Language:	zh-TW
Published:	1998
Online Access:	http://ndltd.ncl.edu.tw/handle/34937730337921746085

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