Investigation of InGaP/GaAs Delta-Doped Heterojunction Bipolar Transistor (D2HBT)
碩士 === 國立成功大學 === 電機工程學系 === 86 === An InGaP/GaAs single heterojunction bipolar transistor (SHBT) with an 50A setback layer and a d-doped sheet inserting between base-emitterheterointerface was fabricated successfully and stuided. From the...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1998
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| Online Access: | http://ndltd.ncl.edu.tw/handle/34937730337921746085 |