The Investigation of Physical Properties of Boron-doped Semiconducting Diamond Films
碩士 === 國立成功大學 === 物理學系 === 86 === A highly oriented, (100) textured diamond film was grown on the substratesof silicon (100), followed by the deposition of an epitaxial boron-doped layer in microwave plasma-assisted chemical vapor depos...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1998
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| Online Access: | http://ndltd.ncl.edu.tw/handle/52777136217350216610 |
| Summary: | 碩士 === 國立成功大學 === 物理學系 === 86 === A highly oriented, (100) textured diamond film was grown on
the substratesof silicon (100), followed by the deposition of an
epitaxial boron-doped layer in microwave plasma-assisted
chemical vapor deposition (MPCVD). Using X-ray diffraction
and RAman spectroscopy to identify the microstructure,scanning
electron microscopy (SEM) and atomic force microscopy (AFM) to
observethe morphologies of sample surface. Measurements of the
a.c.conduction was determined by HP4284A LCR meter. From the
temperature and the frequency dependencies we concludethat
boron-doped diamond films have the mechanism of hopping
transport.
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